金士頓 KVR16LN11/4(DDR3-1600 CL=11 4GB*1 1.35V)適用INTEL AMD 較新款CPU/072620
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- $890
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 信用卡刷卡價 |
$908 |
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分期付款限 台北富邦 永豐銀行 星展(含原花旗) 卡友使用 |
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| 3期 2.35% 利率 | 每期 |
$304 |
| 6期 4% 利率 | 每期 |
$154 |
| 12期 6% 利率 | 每期 |
$79 |
| 24期 9% 利率 | 每期 |
$40 |
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KVR16LN11/4
4GB 1Rx8 512M x 64-Bit PC3L-12800
CL11 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 512M x 64-bit (4GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), 1Rx8, low
voltage, memory module, based on eight 512M x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR3-1600 timing of 11-11-11 at 1.35V or 1.5V. This
240-pin DIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:
FEATURES
• JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
• VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
• Asynchronous Reset
• PCB Height:
0.740” (18.75mm) or 1.180” (30.00mm), single sided
component
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 2.160 W*
UL Rating 94 V - 0
Operating Temperature 0o
C to 85o
C
Storage Temperature -55o C to +100o
C
*Power will vary depending on the SDRAM.
